Hi, I just have a couple questions.
In tier A, you have the MSI B550-A Pro, which has a 10 phase based on the ubiquitous discrete mosfets that MSI always uses, the 4C029N and 4C024N, with 1 of each per phase.
Then, in tier C, you have the X570 Gaming Pro carbon, which has a 10 phase with dual n-fets (QA3111N6N).
This puzzled me, so I looked up the spec sheets for both, and it turns out that the X570 GPC has a stronger VRM, efficency-wise.
The 4C029N high side mosfet has a RDS(ON) of 5.88ohms, and the 4C024N low side has a RDS(ON) of 2.8 ohms.
However, the MSI gaming pro carbon, with its dual n-fets, have slightly less resistance on the high side (5.6ohm), and *significantly* less resistance on the low side, 1.3 ohms to be precise. The low side creates the most amount of heat generally, which means the power loss of the QA3111N6N will be significantly lower. Even the rated throughput of the dual nfets is significantly higher (not that thats really a great resource)
So this leads me to question, why the B550-A so high, yet the X570 Gaming pro carbon so low? They both have the same amount of phases (5x2) powered by the same controller (IR35201) using the same doubler/driver (IR3598s), and the same amount of mosfets per stage (1 each of high and low), with the only difference being the significantly higher efficiency of the X570 GPC's dual n fets.
Attached are screenshots of the spec sheets for reference.
Not to mention, the X570 Aorus Elite has a stonger VRM still, using a 12 phase with 50a DrMOS power stages