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Intel (INTC) , Micron (MU) Unveil New 3D XPoint Technology

Amit Moryossef

Intel (NASDAQ: INTC) and Micron Technology, Inc. (Nasdaq: MU) unveiled 3D XPoint technology, a non-volatile memory that has the potential to revolutionize any device, application or service that benefits from fast access to large sets of data. Now in production, 3D XPoint technology is a major breakthrough in memory process technology and the first new memory category since the introduction of NAND flash in 1989.

 

Details about 3D XPoint technology include:

 

  • Cross Point Array Structure – Perpendicular conductors connect 128 billion densely packed memory cells. Each memory cell stores a single bit of data. This compact structure results in high performance and high-density bits.
  • Stackable – In addition to the tight cross point array structure, memory cells are stacked in multiple layers. The initial technology stores 128Gb per die across two memory layers. Future generations of this technology can increase the number of memory layers, in addition to traditional lithographic pitch scaling, further improving system capacities.
  • Selector – Memory cells are accessed and written or read by varying the amount of voltage sent to each selector. This eliminates the need for transistors, increasing capacity while reducing cost.
  • Fast Switching Cell – With a small cell size, fast switching selector, low-latency cross point array and fast write algorithm, the cell is able to switch states faster than any existing non-volatile memory technology today.

 

Source: http://www.streetinsider.com/Corporate+News/Intel+(INTC)+,+Micron+(MU)+Announce+Revolutionary+3D+XPoint+Technology/10756443.html

 

 

This information is taken from the intel press email, embargoed about 15 minutes ago.

Sorry I cant write more and just copy paste, I just now written a full article on the subject in Hebrew..

 

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Beat me to this one! I'm still watching the press release and reading the article

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What's the difference between this and 3DNAND?

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What's the difference between this and 3DNAND?

im guessing its faster 

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hebrew? where copy and paste the hebrew

I ment that I copy-pasted the info from the website I linked, and not written anything myself on the subject.

My article (in hebrew): http://www.pcgalaxy.co.il/intel-and-micron-revealed-new-memory-architecture/

It is also copied alot from the release, but I packaged it I believe nicely.

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What's the difference between this and 3DNAND?

It is alot faster, and alot more durable. You can read about the architecture in the "source" link.

Also, 3d nand in my understanding is just stacked nand, not a new architecture.

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What's the difference between this and 3DNAND?

It's truly non-volatile (you'd have to leave it powered off for about 30 years in theory to lose data), and the write speed potential is 4X what NAND flash is today.

Software Engineer for Suncorp (Australia), Computer Tech Enthusiast, Miami University Graduate, Nerd

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This makes me interested... What speeds would we be looking at?

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This makes me interested... What speeds would we be looking at?

"The technology is up to 1,000 times faster and has up to 1,000 times greater endurance than NAND, and is 10 times denser than conventional memory."

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What about actual P/E cycles?

When are they going to ship these chips?

On a mote of dust, suspended in a sunbeam

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What about actual P/E cycles?

When are they going to ship these chips?

As said in the article, supposedly 1000x higher endurance, though at what nanometer and cell density level isn't said. It could be a worst case 10nm TLC, making it less than impressive.

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Note guys this apparently the official naming/implementation of Hybrid Memory Cube that intel and micron have been working on together.

 

Someone please take a note of that. This is not different than that in any fashion other than the most recent iteration.

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As said in the article, supposedly 1000x higher endurance, though at what nanometer and cell density level isn't said. It could be a worst case 10nm TLC, making it less than impressive.

That's why I asked actual values, if there are any

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I sure hope they don't put this on a SATA drive. It should be on a PCI-e connector, over NVMe or something.

 

Speaking of stuff that should go on PCI-e connectors, has there been a V-NAND SSD on it yet? Or is the 850 series the only dive that has V-NAND? I want to see how fast that can go.

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Speaking of stuff that should go on PCI-e connectors, has there been a V-NAND SSD on it yet? Or is the 850 series the only dive that has V-NAND? I want to see how fast that can go.

Intel's 750 series is 3D NAND.

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Intel's 750 series is 3D NAND.

daaamnn. Alright then. We need to get this into an SSD that'll "breathe fire" on the 750s, just like the 750s "breathe fire" over everything else.

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Even if they could get half that speed wouldn't it saturate an M.2 PCI interface? If so, what kind of interconnect would be needed to support such speeds?

 

Forgive me if this is a dumb question, I am not so educated on this type of thing. 

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so .. hmm, SK-Hynix started to produce 3D-Nand http://www.eetimes.com/document.asp?doc_id=1327264&_mc=RSS_EET_EDT

Memory chipmaker SK Hynix Inc. has said it will prepare for its first production volumes of 3D NAND flash memory in the third quarter of 2015. It joins the ranks of Samsung, Toshiba and Micron.

The part will be a 36-layer 128Gbit NAND multilayer-cell (MLC) device. In addition the company said it would complete the design of a 48-layer triple-layer cell (TLC) in 2015 to be able to meet demand from the solid-state drive market in 2016. SK Hynix had announced a 24-layer NAND device as a prototype.

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I read in another one of the posted articles mention that it reads a resistance to call a bit.

 

So 3D memory aside, is this the first real high-density application of the memristor we're looking at here that isn't just a small chip for sale on Digikey? That would excite me a hell of a lot more.

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So....I wonder how long NVME will last before bottlenecking the new type of storage memory.

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Been waiting awhile for them to announce this.

Makin' and breakin' wafers.

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So....I wonder how long NVME will last before bottlenecking the new type of storage memory.

For consumers and even professionals: 10 years easy. HPC: too late.

 

If you mean the tech itself, that all comes down to controllers. NVMe could easily be a bottleneck for SSDs even today if the controllers were advanced enough.

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For consumers and even professionals: 10 years easy. HPC: too late.

 

If you mean the tech itself, that all comes down to controllers. NVMe could easily be a bottleneck for SSDs even today if the controllers were advanced enough.

I meant the standard itself, AHCI ended up not being good enough for NAND based SSD, let alone SSD with the new NV memory. (I should have worded my original comment differently).

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